The study of the silicon oxide thickness on crystalline Si by X-ray photoelectron spectroscopy and spectroscopic ellipsometry

被引：0
|
作者：
Cotirlan, C. [1 ]
Galca, A. C. [1 ]
Ciobanu, C. S. [1 ]
Logofatu, C. [1 ]
机构：
[1] Natl Inst Mat Phys, RO-077125 Bucharest, Romania
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2010年 / 12卷 / 05期
关键词：
Thin films; X-ray photoelectron spectroscopy; Spectroscopic ellipsometry; INTERFACE; DIOXIDE; PLASMA; LAYERS; WATER;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The to study of the total oxide (SiO2+SiOx) thickness, SiO2 and SiOx (e.g. Si2O, SiO, Si2O3) thicknesses on Si(100) crystalline substrate with take-off angles ranging from 30 degrees to 80 degrees has been carried out by spectrometric method. The d(s) X-ray Photoelectron Spectroscopy (XPS) thicknesses were compared with d(EL) thicknesses obtained by fitting the Spectroscopic Ellipsometry (SE) spectra. A qualitatively good correlation is revealed. However, from these estimations of film thicknesses it results that ellipsometry analysis cannot be as accurate as in XPS evaluation. This is due to uncertainty of used optical constants as well due to very thin oxide films used in this work.
引用
收藏
页码：1092 / 1097
页数：6
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