Nanowire Based Electronics: Challenges and Prospects

被引:0
|
作者
Lu, Wei [1 ]
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
关键词
SILICON;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This review provides a survey of recent progresses in nanowire (NW) electronics. Studies at the single-transistor level have shown that devices based on chemically synthesized nanowires can offer similar or better performance compared to their CMOS counterparts. The ultra-thin body, one-dimensional NW structure further assures that electrical integrity can be preserved even in aggressively scaled devices. Three different approaches have been developed to address the critical device integration issue.
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页码:865 / 868
页数:4
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