Nanowire Based Electronics: Challenges and Prospects

被引：0
|
作者：
Lu, Wei [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
来源：
2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING | 2009年
关键词：
SILICON;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This review provides a survey of recent progresses in nanowire (NW) electronics. Studies at the single-transistor level have shown that devices based on chemically synthesized nanowires can offer similar or better performance compared to their CMOS counterparts. The ultra-thin body, one-dimensional NW structure further assures that electrical integrity can be preserved even in aggressively scaled devices. Three different approaches have been developed to address the critical device integration issue.
引用
收藏
页码：865 / 868
页数：4
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