共 50 条
- [31] Novel LEDs using unique lateral p-n junctions on GaAs (311)A patterned substrates LIGHT -EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS VIII, 2004, 5366 : 212 - 218
- [32] VOLT-AMPERE CHARACTERISTICS OF P-N JUNCTIONS IN THE FORWARD DIRECTION SOVIET PHYSICS-SOLID STATE, 1962, 4 (01): : 69 - 72
- [33] TRANSITIONAL CHARACTERISTICS OF InAs p-n JUNCTIONS IN A PHOTODIODE MODE. Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika), 1972, 17 (05): : 865 - 868
- [34] CURRENT-VOLTAGE CHARACTERISTICS OF P-N JUNCTIONS IN ZINC SULFIDE RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1968, 13 (06): : 924 - &
- [35] CHARACTERIOGRAPH FOR RECORDING OF VOLT-CAPACITANCE CHARACTERISTICS OF P-N JUNCTIONS INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1968, (03): : 716 - &
- [39] SPECTRAL CHARACTERISTICS OF GAAS P-N JUNCTIONS IN NEAR ULTRAVIOLET REGION SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (03): : 570 - &
- [40] VOLT-AMPERE CHARACTERISTICS OF ALLOY P-N JUNCTIONS IN INAS RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1965, 10 (09): : 1466 - &