Photoluminescence and optical characterization of a-SixN1-x:H based multilayers grown by PECVD

被引：2

作者：

Giorgis, F ^{[1
]}

Giuliani, F ^{[1
]}

Pirri, CF ^{[1
]}

Tresso, E ^{[1
]}

Galloni, R ^{[1
]}

Rizzoli, R ^{[1
]}

Summonte, C ^{[1
]}

Desalvo, A ^{[1
]}

Zignani, F ^{[1
]}

Rava, P ^{[1
]}

Caccavale, F ^{[1
]}

机构：

[1] Politecn Torino, INFM, Dip Fis & Unita, I-10129 Turin, Italy

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-489

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High room temperature photoluminescence efficiency (PLE) was observed for the first time in a-Si(x)N(1-x):H based nanometric multilayers deposited by plasma enhanced chemical vapour deposition (PECVD). The structure consists of alternate stoichiometric a-Si(3)N(4):H barrier layers (E(04)=5.0 eV) and well layers in which E(04) is varied between 2.11 eV and 2.64 eV. The peak of PL spectra and the absorption coefficient edge exhibits a blue shift up to 0.5-0.6 eV by decreasing the well thickness from 30 Angstrom down to 5-10 Angstrom. A strong increase in the PLE of multilayers, with well thickness around 5-10 Angstrom, with respect to the PLE of bulk material was obtained. A p-i-n light emitting device (LED) with a multilayered structure as i-layer, having well layers with E(04)=2.64 eV and thickness 10 Angstrom, is presented. The LED under forward bias shows an emission visible with the naked eye, with limited degradation after 8 hours of continuous operation.

引用

页码：489 / 494

页数：6

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