Etching high aspect ratio silicon trenches

被引：0

作者：

Panda, S ^{[1
]}

Ranade, R ^{[1
]}

Mathad, GS ^{[1
]}

机构：

[1] IBM Microelect, Semicond Res & Dev Ctr, Hopewell Jct, NY 12533 USA

来源：

PLASMA PROCESSING XIV | 2002年 / 2002卷 / 17期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

High aspect ratio trenches are necessary to achieve target values of capacitance in the fabrication of charge storage capacitors in DRAM devices. Etching of high aspect ratio trenches suffers from a RIE lag mechanism, due to reduced energy of ions and etching species at the bottom of a deep trench. In this paper, two methods are proposed to minimize these problems and thereby achieve higher silicon etch rates and deeper trenches.

引用

页码：210 / 217

页数：8

共 50 条

[41] HBr-based inductively coupled plasma etching of high aspect ratio nanoscale trenches in GaInAsP/InP
Zhou, Wei
Sultana, N.
MacFarlane, D. L.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (06): : 1896 - 1902
[42] Ionized titanium deposition into high aspect ratio vias and trenches
Zhong, G
Hopwood, J
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (02): : 405 - 409
[43] HAREM: High aspect ratio etching and metallization
Sarajlic, E.
Yamahata, C.
Cordero, M.
Cordero, M.
Fujita, H.
MEMS 2008: 21ST IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST, 2008, : 315 - 318
[44] High Aspect Ratio Sub-15 nm Silicon Trenches From Block Copolymer Templates
Gu, Xiaodan
Liu, Zuwei
Gunkel, Ilja
Chourou, S. T.
Hong, Sung Woo
Olynick, Deirdre L.
Russell, Thomas P.
ADVANCED MATERIALS, 2012, 24 (42) : 5688 - 5694
[45] Cryogenic etch process development for profile control of high aspect-ratio submicron silicon trenches
Pruessner, Marcel W.
Rabinovich, William S.
Stievater, Todd H.
Park, Doewon
Baldwin, Jeffrey W.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (01): : 21 - 28
[46] Effect of low temperature and concentration KOH etching on high aspect ratio silicon structures
Defforge, Thomas
Coudron, Loic
Gautier, Gael
Kouassi, Sebastien
Vervisch, Wilfried
Van, Francois Tran
Ventura, Laurent
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 6, 2011, 8 (06): : 1815 - 1819
[47] High aspect ratio hydrogenation-assisted lateral etching of (100) silicon substrates
Kayyalha, M.
Nilchi, J. Naghsh
Ebrahimi, A.
Mohajerzadeh, S.
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2011, 21 (07)
[48] Optimization of HNA etching parameters to produce high aspect ratio solid silicon microneedles
Hamzah, A. A.
Abd Aziz, N.
Majlis, B. Yeop
Yunas, J.
Dee, C. F.
Bais, B.
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2012, 22 (09)
[49] Plasma chemical etching of high-aspect-ratio silicon micro- and nanostructures
I. I. Amirov
Russian Journal of General Chemistry, 2015, 85 : 1252 - 1259
[50] High aspect ratio etching of atomic force microscope-patterned nitrided silicon
Harfenist, SA
Yazdanpanah, MM
Cohn, RW
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (03): : 1176 - 1180

← 1 2 3 4 5 →