Nonequilibrium carrier recombination in highly excited bulk SiC crystals

被引：6

作者：

Jarasiunas, K. ^{[1
]}

Scajev, P. ^{[1
]}

Gudelis, V. ^{[1
]}

Klein, P. B. ^{[2
]}

Kato, M. ^{[1
,3
]}

机构：

[1] Vilnius Univ, Inst Appl Res, Sauletekio Ave 9-3, LT-10222 Vilnius, Lithuania

[2] US Naval, Res Lab, Washington, DC 20375 USA

[3] Nagoya Inst Technol, Dept Engn Phys Elect & Mec, Nagoya, Aichi 4668555, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

free carrier absorption; bimolecular and Auger recombination; cubic and hexagonal SiC;

D O I：

10.4028/www.scientific.net/MSF.645-648.215

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

We applied time-resolved free carrier absorption (FCA) to monitor non-equilibrium carrier dynamics in 4H epilayers and 3C SiC bulk crystals at excess carrier densities in the Delta N = 10(17) - 10(19) cm(-3) range. The numerical fitting of FCA decay kinetics provided the linear and nonlinear carrier recombination rates in the 40-390 K range and the absorption cross-sections sigma(eh) at 1064 nm. In 4H, the decrease of the bulk lifetime (800 us) with excitation provided the bimolecular and Auger coefficients B=(1.2 +/- 0.4)x10(-12) cm(3)/s and C=(7 +/- 4)x10(-31) cm(6)/s, respectively, at room temperature. These values for 3C were 55-150 us, (2.0 +/- 0.4)x10(-12) cm(3)/s, and (2 +/- 1)x10(-32) cm(6)/s, respectively. The rate of linear and nonlinear recombination increased at lower temperatures. A value of sigma(eh) =44x10(-18) cm(2) for 3C SiC at 1.064 mu m was found 2.3 times smaller than that for 4H SiC.

引用

页码：215 / +

页数：2

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