Synthesis, growth and investigation of structural, optical, photoluminescence and thermal studies on the ZnSO4-doped DAST crystal for NLO applications

被引:17
|
作者
Sivakumar, Thirumuruganantham [1 ]
Vignesh, Shanmugam [2 ]
Jeyaperumal, Kalyana Sundar [1 ]
Muppudathi, Anna Lakshmi [3 ]
机构
[1] Periyar Univ, Dept Phys, Mat Sci Res Lab, Salem 636011, Tamil Nadu, India
[2] Sri Sivasubramaniya Nadar Coll Engn, SSN Res Ctr, Chennai 603110, Tamil Nadu, India
[3] ERK Coll Arts & Sci, Dept Phys, Dharmapuri 636905, Tamil Nadu, India
关键词
PEROVSKITE SOLAR-CELLS; SINGLE-CRYSTALS; MECHANICAL-PROPERTIES; DOPING CONCENTRATION; ZINC-SULFATE; PERFECTION; EFFICIENCY;
D O I
10.1007/s10854-021-06331-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Optically enhanced organometallic ZnSO4-doped p-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) single crystal is grown by cost-effective solution growth slow evaporation technique. Further, we investigated the dopant effects on DAST with different device properties, the structural parameters of grown single crystals were analyzed through single X-ray diffraction, powder X-ray diffraction, energy dispersive X-ray analysis (EDAX). The lower cut-off wavelength of absorbance of ZnSO4-dopant crystals are 379, 380, 382 nm and of DAST is 388 nm which was analyzed by UV-Vis absorption spectra that reveals the improvement of optical effects. The photoluminescent spectra revealed that the pure and ZnS-doped DAST crystals exhibiting green emission characteristics which help to fabricate the green LED. The SHG studies revealed that the enhancement of second-order nonlinear efficiency of ZnSO4-DAST-dopant crystals (ZnS 1, ZnS 3) is 1.1, 1.4 times higher than DAST and SHG efficiency of ZnS 5-doped DAST crystal decreased due to deformation of crystal structure. The thermogravimetric analysis exhibits good thermal stability such that 258.74 degrees C for pure and 259.41, 259.77, 258.94 degrees C for ZnSO4-dopant crystals which ensures that the high thermal stability than DAST crystal. The exploration of various properties of the results of grown ZnS-doped DAST crystals are utilized exclusively in the fields of optoelectronic and nonlinear optical (NLO) device applications.
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页码:17936 / 17945
页数:10
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