Fluorescence XAS using Ge PAD: Application temperature superconducting to high-thin film single crystals

被引：0
|
作者：
Oyanagi, H. [1 ]
Tsukada, A. [2 ]
Naito, M. [2 ]
Saini, N. L. [3 ]
Zhang, C. [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan
[2] Nippon Telegraph & Tel Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[3] Univ Roma La Sapienza, I-00185 Rome, Italy
来源：
X-RAY ABSORPTION FINE STRUCTURE-XAFS13 | 2007年 / 882卷
关键词：
PAD; fluorescence x-ray absorption spectroscopy; thin film single crystal; high-temperature superconductor;
D O I：
10.1063/1.2644698
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A Ge pixel array detector (PAD) with 100 segments was used in fluorescence x-ray absorption spectroscopy (XAS) study, probing local structure of high temperature superconducting thin film single crystals. Independent monitoring of individual pixel outputs allows real-time inspection of interference of substrates which has long been a major source of systematic error. By optimizing grazing-incidence angle and azimuthal orientation, smooth extended x-ray absorption fine structure (EXAFS) oscillations were obtained, demonstrating that strain effects can be studied using high-quality data for thin film single crystals grown by molecular beam epitaxy (MBE). The results of (La,Sr)(2)CUO4 thin film single crystals under strain are related to the strain dependence of the critical temperature of superconductivity.
引用
收藏
页码：899 / +
页数：2
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