On the effects of thickness on adhesion of TiW diffusion barrier coatings in silicon integrated circuits

被引:20
|
作者
Roshanghias, A. [1 ]
Khatibi, G. [2 ]
Pelzer, R. [3 ]
Steinbrenner, J. [3 ]
机构
[1] Univ Vienna, Inst Inorgan Chem Mat Chem, A-1010 Vienna, Austria
[2] Vienna Univ Technol, Fac Tech Chem, A-1040 Vienna, Austria
[3] Infineon Technol Austria, Villach, Austria
来源
关键词
Adhesion; Nanoindentation; Thickness effect; Thin film; Interface; Delamination; INTERFACIAL ADHESION; THIN-FILMS; NANOINDENTATION; TOUGHNESS;
D O I
10.1016/j.surfcoat.2014.10.065
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, the influence of thickness on adhesion properties of titanium-tungsten (TiW) thin films on silicon substrate has been investigated. The adhesion energy release rate of the coatings in the range of 300 to 1300 nm in thickness has been evaluated via nanoindentation-induced blister technique. Cross-sectional electron microscopy studies proved that thin film coating around the indenter impression has been successfully delaminated. The results also revealed that with increasing the thickness of TiW layer, adhesion toughness of the coating decreases. Accordingly, it was suggested that higher surface energy due to the smaller mean grain size and energy dissipation due to decohesion through the coatings corresponds to higher adhesion in coatings with lower thicknesses. It was found that in thinner films decohesion occurs prior to delamination. As a result the introduced energy from indentation in thinner films will not merely be spent for delamination and deflection of the crack to the surface of coatings impede interfacial crack to grow further. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:386 / 392
页数:7
相关论文
共 50 条
  • [41] Effects of silicon nitride diffusion barrier on germanium MOS capacitors with HfON gate dielectrics
    胡爱斌
    徐秋霞
    半导体学报, 2009, 30 (10) : 33 - 37
  • [42] Effects of silicon nitride diffusion barrier on germanium MOS capacitors with HfON gate dielectrics
    Hu Aibin
    Xu Qiuxia
    JOURNAL OF SEMICONDUCTORS, 2009, 30 (10)
  • [43] Plasma-deposited silicon oxide barrier films on polyethersulfone substrates: temperature and thickness effects
    Wuu, DS
    Lo, WC
    Chiang, CC
    Lin, HB
    Chang, LS
    Horng, RH
    Huang, CL
    Gao, YJ
    SURFACE & COATINGS TECHNOLOGY, 2005, 197 (2-3): : 253 - 259
  • [44] Effects of interface morphology and TGO thickness on residual stress of EB-PVD thermal barrier coatings
    Chen, Jianwei
    Zhao, Yang
    Ma, Jian
    BEHAVIOR AND MECHANICS OF MULTIFUNCTIONAL MATERIALS AND COMPOSITES 2015, 2015, 9432
  • [45] Effect of substrate surface roughness and film thickness on the properties of Teflon amorphous fluoropolymer thin films for silicon integrated circuits
    Pingalay, D
    Perahia, D
    Timble, N
    Singh, R
    Poole, KF
    LOW AND HIGH DIELECTRIC CONSTANT MATERIALS: MATERIALS SCIENCE, PROCESSING, AND RELIABILITY ISSUES AND THIN FILM MATERIALS FOR ADVANCED PACKAGING TECHNOLOGIES, 2000, 99 (07): : 46 - 52
  • [46] An integrated optical hydrogen sensor on a silicon-on-insulator platform: Effects of palladium film thickness
    Carriere, Nicholas
    Alam, M. Z.
    Mojahedi, Mo
    Aitchison, J. Stewart
    SENSORS AND ACTUATORS B-CHEMICAL, 2015, 216 : 6 - 10
  • [47] The excellent protection effects of silicon/ytterbium silicate bilayer environmental barrier coatings on SiCf/SiC composites
    Wang, Yanfei
    Zhang, Jin
    Chen, Xiangjian
    Wan, Fan
    Jian, Yingjie
    Liu, Rongjun
    INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY, 2022, 19 (06) : 2950 - 2956
  • [48] Near-zero-thickness self-assembled molecular layers for future device structures: Interfacial adhesion and diffusion barrier properties
    Ganesan, PG
    Cui, G
    Ellis, AV
    Kane, RS
    Ramanath, G
    THERMEC'2003, PTS 1-5, 2003, 426-4 : 3487 - 3492
  • [49] Copper Anisotropy Effects in Three-Dimensional Integrated Circuits Using Through-Silicon Vias
    Karmarkar, Aditya P.
    Xu, Xiaopeng
    Yeap, Kong-Boon
    Zschech, Ehrenfried
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2012, 12 (02) : 225 - 232
  • [50] Enhanced thermo-optic effects in silicon nitride photonic integrated circuits via polymer claddings
    Pruessner, Marcel W.
    Tyndall, Nathan F.
    Walsh, Kyle J.
    Stievater, Todd H.
    JOURNAL OF NANOPHOTONICS, 2023, 17 (04)