Electrical transport and 1/f noise in semiconducting carbon nanotubes

被引：23
|
作者：
Lin, Yu-Ming [1 ]
Appenzeller, Joerg [1 ]
Chen, Zhihong [1 ]
Avouris, Phaedon [1 ]
机构：
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2007年 / 37卷 / 1-2期
关键词：
carbon nanotube; noise; Schottky barrier; FET;
D O I：
10.1016/j.physe.2006.07.008
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We investigate electrical transport,and noise m semiconducting carbon nanotubes. By studying carbon nanotube devices with various,diameters, and contact metals, we show that the,ON-currents of CNFETs are governed by the heights of the Schottky barriers at the metal/nanotube interfaces. The current fluctuations are dominated by 1/f noise at low-frequencies and correlate with the number of transport carriers in the device regardless of contact metal. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：72 / 77
页数：6
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