共 50 条
- [23] Ferromagnetic contact between Ni and MoX2 (X = S, Se, or Te) with Fermi-level pinning 2D MATERIALS, 2017, 4 (02):
- [27] Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 2D MATERIALS, 2014, 1 (01):
- [28] Modulation of band gap and optical response of layered MoX2 (X = S, Se, Te) for electronic and optoelectronic applications MATERIALS TODAY COMMUNICATIONS, 2021, 28
- [30] Comparative analysis of strain engineering on the electronic properties of homogenous and heterostructure bilayers of MoX2 (X = S, Se, Te) MICRO AND NANOSTRUCTURES, 2022, 168