Laser-induced photodetachment in high-density low-pressure SF6 magnetoplasmas

被引:10
|
作者
St-Onge, L
Chaker, M
Margot, J
机构
[1] Univ Montreal, Grp Phys Plasmas, Montreal, PQ H3C 3J7, Canada
[2] INRS Energie & Mat, Varennes, PQ J3X 1S2, Canada
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2000年 / 18卷 / 05期
关键词
D O I
10.1116/1.1285935
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Using laser-induced phetodetachment (LIPD), we investigate in some detail how different discharge parameters affect the negative ion fraction in high-density low-pressure SF6 magnetoplasmas sustained by the propagation of electromagnetic surface waves. A plane electrostatic probe is used for collection of the photodetached electrons. Careful testing of the LIPD technique itself is carried out prior to systematic measurements and adequate laser fluence conditions are determined. Negative ions are found to outnumber electrons several times, even at mTorr and submTon pressures, indicating the important electronegative character of the discharge. The dependence of the negative ion fraction on gas pressure, argon admixture, microwave power, and axial and radial position in the reactor is interpreted on the basis of different negative ion formation and loss mechanisms. The negative ion fraction is found to be maximum in conditions and regions of minimal electron temperature and positive ion density. (C) 2000 American Vacuum Society. [S0734-2101(00)00305-5].
引用
收藏
页码:2363 / 2371
页数:9
相关论文
共 50 条
  • [31] INVESTIGATION OF THE TEMPORAL BEHAVIOR OF THE H(-) DENSITY IN A LOW-PRESSURE PULSED DISCHARGE USING LASER PHOTODETACHMENT
    MELLON, KN
    COONAN, BP
    HOPKINS, MB
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1994, 27 (12) : 2480 - 2486
  • [32] Real-time in situ monitoring of dust particle growth in a low-pressure nanodusty plasma based on laser-induced photodetachment
    Donders, T. J. M.
    Beckers, J.
    APPLIED PHYSICS LETTERS, 2024, 124 (09)
  • [33] LOW-TEMPERATURE ETCHING OF SI IN HIGH-DENSITY PLASMA USING SF6/O-2
    BARTHA, JW
    GRESCHNER, J
    PUECH, M
    MAQUIN, P
    MICROELECTRONIC ENGINEERING, 1995, 27 (1-4) : 453 - 456
  • [34] Quantitative Analysis of Trace O Concentration in SF6 with Laser-Induced Breakdown Spectroscopy
    Yang Wen-bin
    Li Bin-cheng
    SPECTROSCOPY AND SPECTRAL ANALYSIS, 2017, 37 (12) : 3865 - 3870
  • [35] Si etching in high-density SF6 plasmas for microfabrication:: surface roughness formation
    Gogolides, E
    Boukouras, C
    Kokkoris, G
    Brani, O
    Tserepi, A
    Constantoudis, V
    MICROELECTRONIC ENGINEERING, 2004, 73-4 : 312 - 318
  • [36] HIGH RESOLUTION LASER SPECTROSCOPY ON SF6
    RABINOWI.P
    KELLER, R
    LATOURRE.JT
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (10): : 940 - &
  • [37] High-power IR laser-induced acceleration of SF6 molecules in a secondary pulsed molecular beam
    Apatin, VM
    Makarov, GN
    Nesterov, VV
    CHEMICAL PHYSICS LETTERS, 2001, 347 (1-3) : 101 - 107
  • [39] ELECTRICAL BREAKDOWN IN LOW-PRESSURE PROPANE-OXYGEN FLAMES WITH SF6 AND AIR BUFFERS
    LITTLE, CE
    MAITLAND, A
    IEEE TRANSACTIONS ON ELECTRICAL INSULATION, 1990, 25 (03): : 569 - 573
  • [40] Highly efficient acceleration and collimation of high-density plasma using laser-induced cavity pressure
    Badziak, J.
    Borodziuk, S.
    Pisarczyk, T.
    Chodukowski, T.
    Krousky, E.
    Masek, K.
    Skala, J.
    Ullschmied, J.
    Rhee, Yong-Joo
    APPLIED PHYSICS LETTERS, 2010, 96 (25)