Praseodymium oxide growth on Si(100) by pulsed-laser deposition

被引:9
|
作者
Wolfframm, D
Ratzke, M
Kouteva-Arguirova, S
Reif, J
机构
[1] IHP BTU JointLab, D-03044 Cottbus, Germany
[2] BTU Cottbus, LS Expt Phys 2, D-03044 Cottbus, Germany
关键词
D O I
10.1016/S1369-8001(02)00127-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the pulsed-laser deposition of high-K praseodymium oxide films onto Si(1 0 0) surfaces by laser-ablating a sintered Pr6O11 target. Optical microscope, SEM, and AFM investigations reveal two kinds of PrxOy-surface structures, which are identified as: (a) large-scaled particles, and (b) ordered structures (rods) of different size with different orientations. The size of the particles increases with laser wavelength. The size of the ordered surface structures strongly depends on the substrate temperature. For the first time, we show characteristic Pr-Raman signals which confirm the crystalline quality of the grown layer. They also indicate that the silicon layer at the Si-PrxOy interface is under compressive stress. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:429 / 434
页数:6
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