Memory mechanisms of vertical organic memory transistors

Three-terminal vertical organic memory transistors were fabricated to investigate the memory mechanisms and the relation between memory behavior and applied electrical field. The 9,10-di(2-naphthyl) anthracene was used as the active channel layer for the organic memory transistors. In both the ON and OFF state of the organic memory transistors, the drain-source currents (I(DS)) were modulated by applying various gate-source voltages (V(GS)). The switching drain-source voltage (V(DS)) decreased with an increase in applied V(GS) voltages. The ON/OFF I(DS) current ratio of the organic memory transistors could be modulated up to the maximum value of 2.02 x 10(5) by applying V(GS) voltage bias. (C) 2010 American Institute of Physics. [doi:10.1063/1.3449120]