Vertical organic transistors

被引:60
|
作者
Luessem, Bjoern [1 ]
Guenther, Alrun [2 ]
Fischer, Axel [2 ]
Kasemann, Daniel [2 ]
Leo, Karl [2 ]
机构
[1] Kent State Univ, Dept Phys, Kent, OH 44242 USA
[2] Tech Univ Dresden, Inst Angew Photophys, D-01069 Dresden, Germany
关键词
organic electronics; organic transistors; organic static induction transistor; organic permeable base transistor; organic step-edge transistor; vertical organic field-effect transistor; FIELD-EFFECT TRANSISTORS; STATIC INDUCTION TRANSISTORS; THIN-FILM TRANSISTORS; TUNABLE INJECTION BARRIER; LIGHT-EMITTING DEVICES; LOW-VOLTAGE; METAL-BASE; HIGH-PERFORMANCE; ON/OFF RATIO; LOW-POWER;
D O I
10.1088/0953-8984/27/44/443003
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-mu m structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.
引用
收藏
页数:20
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