0.6 V Operation, 16 % Faster Set/Reset ReRAM Boost Converter with Adaptive Buffer Voltage for ReRAM and NAND Flash Hybrid Solid-State Drives

A 0.6 V boost converter with adaptive buffer voltage is proposed for 3D-integrated Random Access Memory (ReRAM) and NAND flash memory hybrid solid-state drive (SSD). The proposed boost converter with 1- or 2-stage charge pump has two advantages by changing buffer voltage depending on program data size. First, the proposed boost converter with 2-stage charge pump (proposed circuit) decreases SET/RESET time of ReRAM by 97 % compared with the conventional boost converter with no charge pump (conventional 1) [1]. Second, compared with the conventional boost converter with 1- stage charge pump (conventional 2) [2], the total program time is decreased by 16 % with the proposed circuit when the program data size is as large as 10 sectors (5 kbyte). The boost converter and the charge pump are fabricated with the 180 nm standard CMOS process.