Photovoltaic properties of an AlxGa1-xAs solar cell (x=0-0.22) grown on Si substrate by metalorganic chemical vapor deposition and thermal cycle annealing

被引：24
|
作者：
Soga, T
Kato, T
Umeno, M
Jimbo, T
机构：
[1] NAGOYA INST TECHNOL, DEPT ELECT & COMP ENGN, NAGOYA, AICHI 466, JAPAN
[2] NAGOYA INST TECHNOL, RES CTR MICRO STRUCT DEVICES, SHOWA KU, NAGOYA, AICHI 466, JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 12期
关键词：
D O I：
10.1063/1.362616
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of a thermal cycle annealing (TCA) process on the defects in GaAs and AlxGa1-xAs solar cells on Si substrates are described in this paper. The defect density is reduced and the solar cell efficiency is improved by TCA. The defect density and the solar cell efficiency are evaluated in detail with respect to TCA temperature and Al composition. The problems involved in the fabrication of a high efficiency AlGaAs solar cell on a Si substrate are discussed. (C) 1996 American Institute of Physics.
引用
收藏
页码：9375 / 9378
页数：4
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