Chemical interaction of CdTe and Cd1-xZnxTe single crystals with aqueous H2O2+HBr plus Citric acid solutions

被引：1
|
作者：
Tomashik, Z. F. [1 ]
Gnativ, I. I. [1 ]
Tomashik, V. N. [1 ]
Stratiichuk, I. B. [1 ]
机构：
[1] Natl Acad Sci Ukraine, Lashkarev Inst Semicond Phys, UA-03028 Kiev, Ukraine
来源：
RUSSIAN JOURNAL OF INORGANIC CHEMISTRY | 2007年 / 52卷 / 07期
关键词：
Dissolution Rate; Etching Rate; Citric Acid Solution; Hydrobromic Acid; High Dissolution Rate;
D O I：
10.1134/S0036023607070297
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
The chemical etching of single crystals of CdTe and Cd1-x Zn (x) Te solid solutions in bromine-evolving aqueous H2O2 + HBr + citric acid solutions is considered. Simplex design of experiments is used to construct the projections of etching rate isosurfaces and to map the polishing and nonpolishing composition regions. Dissolution in the polishing etchants is diffusion-controlled. As the zinc content of Cd1-x Zn (x) Te is raised, the etching rate increases; the boundaries of the polishing region do not change to any significant extent. The polish composition and the dynamic chemical polishing conditions are optimized for the semiconductors examined.
引用
收藏
页码：1156 / 1160
页数：5
相关论文
共 50 条
  • [31] Chemical interaction of InAs, InSb, GaAs, and GaSb crystal surfaces with (NH4)2Cr2O7-HBr-citric acid etching solutions
    Levchenko, I. V.
    Stratiychuk, I. B.
    Tomashyk, V. N.
    Malanych, G. P.
    Stanetskaya, A. S.
    Korchevoi, A. A.
    INORGANIC MATERIALS, 2017, 53 (11) : 1109 - 1114
  • [32] Chemical interaction of InAs, InSb, GaAs, and GaSb crystal surfaces with (NH4)2Cr2O7–HBr–citric acid etching solutions
    I. V. Levchenko
    I. B. Stratiychuk
    V. N. Tomashyk
    G. P. Malanych
    A. S. Stanetskaya
    A. A. Korchevoi
    Inorganic Materials, 2017, 53 : 1109 - 1114
  • [33] Chemical treatment of monocrystalline cadmium telluride and Cd1-xMnxTe solid solutions by H2O2-HI-citric acid etchant compositions
    Denysyuk, R. O.
    Tomashik, V. M.
    Tomashik, Z. F.
    Chernyuk, O. S.
    Grytsiv, V. I.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2009, 12 (02)
  • [34] Electrochemical and Thermodynamic Investigation of the CdTe Single Crystals in the Na2S-NaOH-H2O Solutions
    Diychuk, V. V.
    Voloshchuk, A. G.
    Nechyporuk, V. V.
    POLISH JOURNAL OF CHEMISTRY, 2009, 83 (03) : 445 - 454
  • [35] Etching behavior of PbTe and Pb1 − xSnxTe crystal surfaces in aqueous H2O2-HBr-tartaric acid solutions
    G. P. Malanych
    V. N. Tomashyk
    I. B. Stratiychuk
    Z. F. Tomashyk
    Inorganic Materials, 2014, 50 : 661 - 666
  • [36] Etching Behavior of PbTe and Pb1-xSnxTe Crystal Surfaces in Aqueous H2O2-HBr-Tartaric Acid Solutions
    Malanych, G. P.
    Tomashyk, V. N.
    Stratiychuk, I. B.
    Tomashyk, Z. F.
    INORGANIC MATERIALS, 2014, 50 (07) : 661 - 666
  • [37] Use of H2O2-HBr-lactic acid etchants for chemical dissolution of PbTe and Pb1-x Sn x Te crystals
    Malanych, G. P.
    Tomashyk, V. N.
    Stratiychuk, I. B.
    Tomashyk, Z. F.
    RUSSIAN JOURNAL OF INORGANIC CHEMISTRY, 2015, 60 (09) : 1143 - 1147
  • [38] MECHANISM OF THE INTERACTION OF AM(VI) AND H2C2O4 IN AQUEOUS ACID-SOLUTIONS
    SHILOV, VP
    SOVIET RADIOCHEMISTRY, 1985, 27 (05): : 540 - 543
  • [39] Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH4)(2)Cr2O7-HBr-citric acid etching composition
    Levchenko, I. V.
    Tomashyk, V. M.
    Stratiychuk, I. B.
    Malanych, G. P.
    Stanetska, A. S.
    Korchovyi, A. A.
    FUNCTIONAL MATERIALS, 2018, 25 (01): : 165 - 171
  • [40] Chemical Interaction of InAs, InSb, GaAs, and GaSb with (NH4)2Cr2O7-HBr-C4H6O6 Etching Solutions
    Levchenko, I. V.
    Stratiychuk, I. B.
    Tomashyk, V. N.
    Malanych, G. P.
    INORGANIC MATERIALS, 2017, 53 (09) : 896 - 901
12345