Chemical interaction of CdTe and Cd1-xZnxTe single crystals with aqueous H2O2+HBr plus Citric acid solutions

被引：1
|
作者：
Tomashik, Z. F. [1 ]
Gnativ, I. I. [1 ]
Tomashik, V. N. [1 ]
Stratiichuk, I. B. [1 ]
机构：
[1] Natl Acad Sci Ukraine, Lashkarev Inst Semicond Phys, UA-03028 Kiev, Ukraine
来源：
RUSSIAN JOURNAL OF INORGANIC CHEMISTRY | 2007年 / 52卷 / 07期
关键词：
Dissolution Rate; Etching Rate; Citric Acid Solution; Hydrobromic Acid; High Dissolution Rate;
D O I：
10.1134/S0036023607070297
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
The chemical etching of single crystals of CdTe and Cd1-x Zn (x) Te solid solutions in bromine-evolving aqueous H2O2 + HBr + citric acid solutions is considered. Simplex design of experiments is used to construct the projections of etching rate isosurfaces and to map the polishing and nonpolishing composition regions. Dissolution in the polishing etchants is diffusion-controlled. As the zinc content of Cd1-x Zn (x) Te is raised, the etching rate increases; the boundaries of the polishing region do not change to any significant extent. The polish composition and the dynamic chemical polishing conditions are optimized for the semiconductors examined.
引用
收藏
页码：1156 / 1160
页数：5
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