Step wandering induced by homoepitaxy on Si(111) during "1x1"-7x7 phase transition

被引：21

作者：

Hibino, H

Homma, Y

Uwaha, M

Ogino, T

机构：

[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] Nagoya Univ, Dept Phys, Chikusa Ku, Nagoya, Aichi 4648602, Japan

来源：

SURFACE SCIENCE | 2003年 / 527卷 / 1-3期

关键词：

scanning electron microscopy (SEM); growth; surface structure; morphology; roughness; and topography; silicon; stepped single crystal surfaces;

D O I：

10.1016/S0039-6028(03)00012-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigate step configurations during homoepitaxial growth on Si(111) near the "1 x 1"-7 x 7 phase transition temperature. The surface mass diffusion constant is larger on "1 x 1" than on 7 x 7. This difference in the surface mass diffusion constant, coupled with the preferential nucleation of 7 x 7 at the upper side of the step, causes asymmetry in the surface mass diffusion during the "1 x 1"-7 x 7 phase transition. This asymmetry leads to step wandering during homoepitaxial growth. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：L222 / L228

页数：7

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