Step wandering induced by homoepitaxy on Si(111) during "1x1"-7x7 phase transition

被引：21
|
作者：
Hibino, H
Homma, Y
Uwaha, M
Ogino, T
机构：
[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[2] Nagoya Univ, Dept Phys, Chikusa Ku, Nagoya, Aichi 4648602, Japan
来源：
SURFACE SCIENCE | 2003年 / 527卷 / 1-3期
关键词：
scanning electron microscopy (SEM); growth; surface structure; morphology; roughness; and topography; silicon; stepped single crystal surfaces;
D O I：
10.1016/S0039-6028(03)00012-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We investigate step configurations during homoepitaxial growth on Si(111) near the "1 x 1"-7 x 7 phase transition temperature. The surface mass diffusion constant is larger on "1 x 1" than on 7 x 7. This difference in the surface mass diffusion constant, coupled with the preferential nucleation of 7 x 7 at the upper side of the step, causes asymmetry in the surface mass diffusion during the "1 x 1"-7 x 7 phase transition. This asymmetry leads to step wandering during homoepitaxial growth. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：L222 / L228
页数：7
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