Parallax measurements of integrated circuit interconnects using a scanning transmission electron microscope

被引：6
|
作者：
Levine, ZH [1 ]
Gao, JJ
Neogi, S
Levin, TM
Scott, JH
Grantham, S
机构：
[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
[2] Montgomery Blair High Sch, Silver Spring, MD 20901 USA
[3] Intel Corp, Q&R Failure Anal, Desktop Platforms Grp, Hillsboro, OR 97124 USA
[4] IBM Corp, Microelect Div, Essex Jct, VT 05452 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 04期
关键词：
D O I：
10.1063/1.1538336
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A 300 keV scanning transmission electron microscope was used to obtain tilt-series images of two two-level copper integrated circuit samples. The center-to-center layer spacing obtained from the tilt series showed internal consistency at the level of 15%, and external validity at the level of 20%. (C) 2003 American Institute of Physics.
引用
收藏
页码：2193 / 2197
页数：5
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