Narrow growth window for stoichiometric, layer-by-layer growth of LaAlO3 thin films using pulsed laser deposition

被引：4

作者：

Golalikhani, M. ^{[1
]}

Lei, Q. Y. ^{[1
]}

Wolak, M. A. ^{[1
]}

Davidson, B. A. ^{[1
]}

Xi, X. X. ^{[1
]}

机构：

[1] Temple Univ, Dept Phys, Philadelphia, PA 19122 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2016年 / 443卷

关键词：

Defects; Surface structure; Laser epitaxy; Oxides; Perovskites; Dielectric materials; BUFFER LAYERS; ELECTRON-GAS; OXIDE; DIELECTRICS; INTERFACES; SUBSTRATE;

D O I：

10.1016/j.jcrysgro.2016.03.025

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We study the structure and surface morphology of the 100 nm homoepitaxial LaAlO3 films grown by pulsed laser deposition in a broad range of growth parameters. We show that there is a narrow window of growth conditions in which the stoichiometric, bulk-like structure is obtained while maintaining a 2-dimensional (2D) layer-by-layer growth mode. In our system, these optimum growth conditions are 100 mTorr background pressure with laser energy density 1.5-2 J/cm(2). The sensitivity to growth conditions of the stoichiometry and structure of LaAlO3 films can have a crucial role in the 2-D electron gas formed at the LaAlO3/SrTiO3 interface. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：50 / 53

页数：4

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