Narrow growth window for stoichiometric, layer-by-layer growth of LaAlO3 thin films using pulsed laser deposition

被引：4
|
作者：
Golalikhani, M. [1 ]
Lei, Q. Y. [1 ]
Wolak, M. A. [1 ]
Davidson, B. A. [1 ]
Xi, X. X. [1 ]
机构：
[1] Temple Univ, Dept Phys, Philadelphia, PA 19122 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2016年 / 443卷
关键词：
Defects; Surface structure; Laser epitaxy; Oxides; Perovskites; Dielectric materials; BUFFER LAYERS; ELECTRON-GAS; OXIDE; DIELECTRICS; INTERFACES; SUBSTRATE;
D O I：
10.1016/j.jcrysgro.2016.03.025
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We study the structure and surface morphology of the 100 nm homoepitaxial LaAlO3 films grown by pulsed laser deposition in a broad range of growth parameters. We show that there is a narrow window of growth conditions in which the stoichiometric, bulk-like structure is obtained while maintaining a 2-dimensional (2D) layer-by-layer growth mode. In our system, these optimum growth conditions are 100 mTorr background pressure with laser energy density 1.5-2 J/cm(2). The sensitivity to growth conditions of the stoichiometry and structure of LaAlO3 films can have a crucial role in the 2-D electron gas formed at the LaAlO3/SrTiO3 interface. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：50 / 53
页数：4
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