A new derivation of the law of the junctions

被引：6
|
作者：
Pota, HR [1 ]
机构：
[1] Univ New S Wales, Univ Coll, Australian Def Force Acad, Sch Informat Technol & Elect Engn, Canberra, ACT 2600, Australia
来源：
IEEE TRANSACTIONS ON EDUCATION | 2004年 / 47卷 / 04期
关键词：
bipolar junction transistor (BJT); diode current; electrons crossing over; pn-junction built-in potential; the law of the junctions;
D O I：
10.1109/TE.2004.832884
中图分类号：
G40 [教育学];
学科分类号：
040101 ; 120403 ;
摘要：
In this paper, the author presents students with a new and simple derivation of the law of the junctions. The law of the junctions is crucial to the correct understanding of the operation of the bipolar junction transistor. The integral of the product of the density of energy states and Fermi-Dirac distribution function is used to derive the density of free electrons and holes crossing from one side to another at a pn-junction under an external applied voltage.
引用
收藏
页码：497 / 499
页数：3
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