GaN and GaAs HEMT Channel Conductance Model for Nonlinear Microwave and RF Applications

An explicit HEMT channel-length modulation model is developed that describes drain conductance in HEMTs. The model is added to a current description based on bulk potential gradient and associated velocity saturation potential. Effective channel-length reduction is described in a compact formulation that correctly fits measured drain conductance and describes formation of the drain current knee. This offers superior high-order linearity and power limit prediction critical for wireless applications.