GaN and GaAs HEMT Channel Conductance Model for Nonlinear Microwave and RF Applications

被引：1
|
作者：
Parker, Anthony E. [1 ]
机构：
[1] Macquarie Univ Sydney, Macquarie Analog Devices Res Lab, Sydney, NSW, Australia
来源：
2021 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2021年
关键词：
Circuit simulation; Channel Length Modulation; Nitrides; GaAs; GaN; HEMTs;
D O I：
10.1109/APMC52720.2021.9661735
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An explicit HEMT channel-length modulation model is developed that describes drain conductance in HEMTs. The model is added to a current description based on bulk potential gradient and associated velocity saturation potential. Effective channel-length reduction is described in a compact formulation that correctly fits measured drain conductance and describes formation of the drain current knee. This offers superior high-order linearity and power limit prediction critical for wireless applications.
引用
收藏
页码：94 / 96
页数：3
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