Sensing Power MOSFET Junction Temperature Using Circuit Output Current Ringing Decay

被引：0
|
作者：
Niu, He [1 ]
Lorenz, Robert D. [1 ]
机构：
[1] Univ Wisconsin, WEMPEC, Dept Mech Engn, Madison, WI 53705 USA
来源：
2013 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2013年
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Junction temperature sensing requirements for fast MOSFET junction temperature control and high power fast switching power converter protection are not easily met with non-intrusive techniques. This paper presents a non-invasive circuit model-based sensing method suitable for a high bandwidth, hard-switching converter power MOSFET junction temperature estimation without any additional temperature detector. For the purpose of demonstrating MOSFET junction temperature sensing, a chopper circuit is used. The ringing superimposed with a circuit load current is used for MOSFET junction temperature estimation. A 'gate drive-RDS-on-L-C' resonant model is implemented indicating the mechanism of power MOSFET turn-on dynamics. Modeling includes the gate-drive output parasitics, power MOSFET intrinsic parameters, PCB parasitics and load parasitics. To evaluate the methodology, LTSpice Simulation and experimental results are studied.
引用
收藏
页码：4270 / 4277
页数：8
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