Study of the dielectric function of ZnS by spectroscopic ellipsometry

被引：0

作者：

Ghong, TH ^{[1
]}

Kim, TJ

Kim, YD

Kim, SJ

Aspnes, DE

Choi, YD

Yu, YM

机构：

[1] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

[2] N Carolina State Univ, Dept Phys, Raleigh, NC 27606 USA

[3] Mokwon Univ, Dept Phys, Taejon 302729, South Korea

[4] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 42卷

关键词：

ellipsometry; ZnS; band gap;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the best room-temperature dielectric function data for zincblende-type, ZnS from :3.7 to 6.0 eV, obtained by spectroscopic ellipsometry together with real-time assessment of overlayer removal. These data were extended to 9.0 eV (without chemical etching) using a variable-angle system. This permit, the first detailed analysis of the E-2 band gap of ZnS, revealing 3 bandgaps in this spectral region.

引用

页码：S238 / S241

页数：4

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