ELLIPSOMETRY OF POROUS n-Si:(Ni, Co) STRUCTURES

被引:0
|
作者
Treideris, M. [1 ]
Simkiene, I. [1 ]
Reza, A. [1 ]
Babonas, J. [1 ]
机构
[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania
来源
LITHUANIAN JOURNAL OF PHYSICS | 2009年 / 49卷 / 04期
关键词
porous n-Si; transition metal nanoparticles; null-ellipsometry; SILICON; NANOPARTICLES;
D O I
10.3952/lithjphys.49406
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The composite samples of porous n-Si, which have been prepared by anodic etching and embedded with Ni and Co nanostructures by electroless process, were investigated by null-ellipsometry technique. The ellipsometric data were analysed in the multilayer model and the composition of porous layer on the substrate surface was determined. The null-ellipsometry technique was shown to be an efficient tool for nondestructive testing and characterization of porous it-Si samples with embedded transition metal structures.
引用
收藏
页码:439 / 444
页数:6
相关论文
共 50 条
  • [31] FEATURES OF CHARGE TRANSPORT IN Mo/n-Si STRUCTURES WITH A SCHOTTKY BARRIER
    Olikh, O. Ya.
    UKRAINIAN JOURNAL OF PHYSICS, 2013, 58 (02): : 126 - 134
  • [32] Electrical characterisation of SiON/n-Si structures for MOS VLSI electronics
    Konofaos, N
    MICROELECTRONICS JOURNAL, 2004, 35 (05) : 421 - 425
  • [33] Negative differential conductivity in n-Si structures with contacts asymmetric in area
    A. M. Musaev
    Semiconductors, 2015, 49 : 1125 - 1128
  • [34] Cu electroplating on n-Si(111): Properties and structure of n-Si/Cu junctions
    Zambelli, T
    Pillier, F
    Allongue, P
    ELECTROCHEMICAL PROCESSING IN ULSI FABRICATION AND SEMICONDUCTOR/METAL DEPOSITION II, PROCEEDINGS, 1999, 99 (09): : 177 - 184
  • [35] Spectral shifts of electroluminescence from porous n-Si under cathodic bias
    Lim, JE
    Chae, WS
    Lee, Y
    Kim, KJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (02) : 647 - 652
  • [36] Mechanism of the visible electroluminescence from metal/porous silicon/n-Si devices
    NEC Corp, Kawasaki, Japan
    J Appl Phys, 3 (1407-1412):
  • [37] Electrical property investigation of the Au/n-Si and Au/PVA+benzimidazole Co complex/n-Si diodes under ultraviolet illumination
    Muharrem Gökçen
    Songül Taran
    Ersin Orhan
    Journal of Materials Science: Materials in Electronics, 2021, 32 : 6323 - 6330
  • [38] LASER ETCHING OF N-SI
    SVORCIK, V
    RYBKA, V
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (07) : 1947 - 1948
  • [39] Mechanism of the visible electroluminescence from metal porous silicon n-Si devices
    Oguro, T
    Koyama, H
    Ozaki, T
    Koshida, N
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (03) : 1407 - 1412
  • [40] Study of porous silicon fabricated by pulsed anodic etching of n-Si(100)
    Ali, N. K.
    Hashim, M. R.
    Aziz, A. Abdul
    2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2006, : 680 - +