Incorporation effect of thin Al2O3 layers on ZrO2-Al2O3 nanolaminates in a composite oxide-high-κ-oxide stack for floating-gate flash memory devices

被引：2

作者：

Joo, Moon Sig ^{[1
]}

Lee, Seung Ryong ^{[1
]}

Yang, Hong-Seon ^{[1
]}

Hong, Kwon ^{[1
]}

Jang, Se-Aug ^{[1
]}

Koo, Jaehyoung ^{[1
]}

Kim, Jaemun ^{[1
]}

Shin, Seungwoo ^{[1
]}

Kim, Myungok ^{[1
]}

Pyi, Seungho ^{[1
]}

Kwak, Nojung ^{[1
]}

Kim, Jin Woong ^{[1
]}

机构：

[1] Hynix Semicond Inc, R&D Div, Inchon 467701, Kyoungki Do, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 4B期

关键词：

inter-polysilicon dielectric; ZrO2-Al2O3; nanolaminate; high-kappa; flash memory; ALD;

D O I：

10.1143/JJAP.46.2193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the electrical properties and reliability of ZrO2-Al2O3 nanolaminates as high-kappa dielectric materials in a composite oxide-high-kappa-oxide (OKO) stack for floating-gate flash memory devices with 40 nm technology nodes and beyond. The effects of incorporating thin Al2O3 layers into ZrO2 films as an inserting layer and a capping layer on the electrical properties and reliability are discussed. The incorporation of Al2O3 layers significantly improves the leakage current versus the capacitive-equivalent thickness (CET) and TDDB characteristics of the ZrO2-Al2O3 nanolaminate compared with those of the pure ZrO2 owing to the mismatch of the grain boundaries, improved resistance to silicon diffusion, and enhanced energetic-electron hardness of the high-K film.

引用

页码：2193 / 2196

页数：4

共 50 条

[21] Ultrathin nitrided-nanolaminate (Al2O3/ZrO2/Al2O3) for metal-oxide-semiconductor gate dielectric applications
Jeon, S
Yang, H
Chang, HS
Park, DG
Hwang, H
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (03): : 1143 - 1145
[22] Thickness dependence of Al2O3/HfO2/Al2O3 stacked tunneling layers on gadolinium oxide nanocrystal nonvolatile memory
Wang, Jer-Chyi
Chen, Chia-Hsin
Lin, Chih-Ting
MICROELECTRONIC ENGINEERING, 2015, 138 : 52 - 56
[23] Indentation testing of an Al2O3/Al2O3+ZrO2 layered composite
Zimovcák, P
Köves, T
Dusza, J
Pesek, L
Chalvet, F
De Portu, G
FRACTOGRAPHY OF ADVANCED CERAMICS II, 2005, 290 : 316 - 319
[24] Conditions for Preparation of Oxide Components and Their Effect on Properties of Al2O3 – ZrO2 – SiC Composite
Yu. I. Ryabkov
P. A. Sitnikov
Refractories and Industrial Ceramics, 2003, 44 : 115 - 118
[25] The effect of fixed oxide charge in Al2O3 blocking dielectric on memory properties of charge trap flash memory devices
Jeon, S
Kim, C
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (08) : G265 - G267
[26] Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices
Darmawan, P.
Chan, M. Y.
Zhang, T.
Setiawan, Y.
Seng, H. L.
Chan, T. K.
Osipowicz, T.
Lee, P. S.
APPLIED PHYSICS LETTERS, 2008, 93 (06)
[27] DISTRIBUTION OF ZRO2 AND AL2O3 IN ULTRAFINE ZRO2-AL2O3 POWDERS FORMED BY THE SPRAY-ICP TECHNIQUE
KAGAWA, M
IMAMURA, Y
USUI, S
SYONO, Y
JOURNAL OF MATERIALS SCIENCE LETTERS, 1984, 3 (08) : 699 - 702
[28] Nanostructured composite ceramic materials in the ZrO2-Al2O3 system
Khrustov, V. R.
Ivanov, V. V.
Kotov, Yu. A.
Kaigorodov, A. S.
Ivanova, O. F.
GLASS PHYSICS AND CHEMISTRY, 2007, 33 (04) : 379 - 386
[29] Nanostructured composite ceramic materials in the ZrO2-Al2O3 system
V. R. Khrustov
V. V. Ivanov
Yu. A. Kotov
A. S. Kaigorodov
O. F. Ivanova
Glass Physics and Chemistry, 2007, 33 : 379 - 386
[30] Tetragonal ZrO2/Al2O3 Stack as High-κ Gate Dielectric for Si-Based MOS Devices
Wu, Yung-Hsien
Chen, Lun-Lun
Lyu, Rong-Jhe
Li, Ming-Yen
Wu, Hsiao-Che
IEEE ELECTRON DEVICE LETTERS, 2010, 31 (09) : 1014 - 1016

← 1 2 3 4 5 →