Incorporation effect of thin Al2O3 layers on ZrO2-Al2O3 nanolaminates in a composite oxide-high-κ-oxide stack for floating-gate flash memory devices

被引：2

作者：

Joo, Moon Sig ^{[1
]}

Lee, Seung Ryong ^{[1
]}

Yang, Hong-Seon ^{[1
]}

Hong, Kwon ^{[1
]}

Jang, Se-Aug ^{[1
]}

Koo, Jaehyoung ^{[1
]}

Kim, Jaemun ^{[1
]}

Shin, Seungwoo ^{[1
]}

Kim, Myungok ^{[1
]}

Pyi, Seungho ^{[1
]}

Kwak, Nojung ^{[1
]}

Kim, Jin Woong ^{[1
]}

机构：

[1] Hynix Semicond Inc, R&D Div, Inchon 467701, Kyoungki Do, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 4B期

关键词：

inter-polysilicon dielectric; ZrO2-Al2O3; nanolaminate; high-kappa; flash memory; ALD;

D O I：

10.1143/JJAP.46.2193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the electrical properties and reliability of ZrO2-Al2O3 nanolaminates as high-kappa dielectric materials in a composite oxide-high-kappa-oxide (OKO) stack for floating-gate flash memory devices with 40 nm technology nodes and beyond. The effects of incorporating thin Al2O3 layers into ZrO2 films as an inserting layer and a capping layer on the electrical properties and reliability are discussed. The incorporation of Al2O3 layers significantly improves the leakage current versus the capacitive-equivalent thickness (CET) and TDDB characteristics of the ZrO2-Al2O3 nanolaminate compared with those of the pure ZrO2 owing to the mismatch of the grain boundaries, improved resistance to silicon diffusion, and enhanced energetic-electron hardness of the high-K film.

引用

页码：2193 / 2196

页数：4

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