The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy

被引：0

作者：

Lundin, W. V. ^{[1
]}

Zavarin, E. E. ^{[1
]}

Brunkov, P. N. ^{[1
]}

Yagovkina, M. A. ^{[1
]}

Troshkov, S. I. ^{[1
]}

Sakharov, A. V. ^{[1
]}

Nikolaev, A. E. ^{[1
]}

Tsatsulnikov, A. F. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2016年 / 42卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

PLANETARY REACTOR; ALN; SAPPHIRE; MOVPE;

D O I：

10.1134/S1063785016040192

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the influence of technological parameters on the surface morphology and development of mechanical stresses in Al(Ga)N layers during their growth by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates. Minimization of tensile stresses under conditions of a retained atomically smooth surface can be achieved by using a combination of factors including (i) nitridation of substrate in ammonia flow, (ii) formation of two-layer AlN-Al(Ga)N structures by introducing a small amount (several percent) of Ga after growth of a thin AlN layer, and (iii) reduction of ammonia flow during growth of an Al(Ga)N layer.

引用

页码：431 / 434

页数：4

共 50 条

[21] The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy
Lundin, W. V.
Zavarin, E. E.
Popov, M. G.
Troshkov, S. I.
Sakharov, A. V.
Smirnova, I. P.
Kulagina, M. M.
Davydov, V. Yu.
Smirnov, A. N.
Tsatsulnikov, A. F.
TECHNICAL PHYSICS LETTERS, 2015, 41 (10) : 1006 - 1009
[22] Optimization of growth conditions for undoped and doped GaAs layers using an empirical model of metalorganic vapor phase epitaxy
Arbenin, D. E.
Burlyaeva, E. V.
Marmalyuk, A. A.
INORGANIC MATERIALS, 2010, 46 (01) : 1 - 5
[23] Influence of surface atom arrangement on the growth of InN layers on GaAs (111)A and (111)B surfaces by metalorganic vapor-phase epitaxy
Murakami, Hisashi
Torii, Jun-ichi
Kumagai, Yoshinao
Koukity, Akinori
JOURNAL OF CRYSTAL GROWTH, 2007, 298 (SPEC. ISS) : 387 - 389
[24] Influence of growth conditions on the residual strain in thick metalorganic vapor phase epitaxy grown InGaAs epilayers
Maigne, P
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (01): : 43 - 47
[25] Metalorganic vapor phase epitaxy growth and characterization of quaternary (Ga,In)(As,Bi) on GaAs substrates
Hepp, Thilo
Massmeyer, Oliver
Duffy, Dominic A.
Sweeney, Stephen J.
Volz, Kerstin
JOURNAL OF APPLIED PHYSICS, 2019, 126 (08)
[26] Metalorganic vapor phase epitaxy growth and characterization of quaternary (Ga,In)(As,Bi) on GaAs substrates
Hepp, Thilo
Maßmeyer, Oliver
Duffy, Dominic A.
Sweeney, Stephen J.
Volz, Kerstin
Journal of Applied Physics, 2019, 126 (08):
[27] Influence of buffer layers on metalorganic vapor phase epitaxy grown GaN on Si(001)
Schulze, F
Dadgar, A
Bläsing, J
Krost, A
APPLIED PHYSICS LETTERS, 2004, 84 (23) : 4747 - 4749
[28] Homoepitaxial growth of AIN layers on freestanding AIN substrate by metalorganic vapor phase epitaxy
Morishita, Tomohiro
Iwaya, Motoaki
Takeuchi, Tetsuya
Kamiyama, Satoshi
Akasaki, Isamu
JOURNAL OF CRYSTAL GROWTH, 2014, 390 : 46 - 50
[29] Epitaxial Growth of ZnTe Layers on ZnO Bulk Substrates by Metalorganic Vapor Phase Epitaxy
Akiyama, Hajime
Hirano, Hiroyuki
Saito, Katsuhiko
Tanaka, Tooru
Nishio, Mitsuhiro
Guo, Qixin
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (04)
[30] METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF ZN1-XMGXTE LAYERS
QUHEN, B
HELBING, R
KUHN, WS
BOUREE, JE
LUSSON, A
GOROCHOV, O
JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 541 - 546

← 1 2 3 4 5 →