Study of thermal annealing of vacancies in ion implanted 3C-SiC by positron annihilation

被引：1

作者：

Ohshima, T

Uedono, A

Itoh, H

Abe, K

Suzuki, R

Ohdaira, T

Aoki, Y

Yoshikawa, M

Mikado, T

Okumura, H

Yoshida, S

Tanigawa, S

Nashiyama, I

机构：

[1] Japan Atom Energy Res Inst, Takasaki, Gumma 37012, Japan

[2] Univ Tsukuba, Inst Mat Sci, Tsukuba, Ibaraki 305, Japan

[3] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

[4] Okayama Univ, Fac Sci, Okayama 700, Japan

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

ion implantation; vacancy-type defects; annealing; positron annihilation;

D O I：

10.4028/www.scientific.net/MSF.264-268.745

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to study the annealing behavior of defects introduced in 3C-SiC by ion implantation, we have performed positron annihilation measurements using monoenergetic positron beams. The 3C-SiC has been implanted with 200keV-N-2(+) and subsequently annealed up to 1400 degrees C. The annealing behavior of vacancy-type defects can be divided into five stages, at which a change in the mean size of the defects and the elimination of defective layers are observed. The obtained result is explained by the migration and combination of vacancies. The influence of oxygen impurities on the annealing behavior of implantation-induced defects is also discussed.

引用

页码：745 / 748

页数：4

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