The application of the barrier-type anodic oxidation method to thickness testing of aluminum films

被引：10

作者：

Chen, Jianwen ^{[1
]}

Yao, Manwen ^{[1
]}

Xiao, Ruihua ^{[1
]}

Yang, Pengfei ^{[1
]}

Hu, Baofu ^{[1
]}

Yao, Xi ^{[1
]}

机构：

[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2014年 / 85卷 / 09期

基金：

美国国家科学基金会;

关键词：

AQUEOUS BORATE SOLUTIONS; AL THIN-FILMS; OXIDE FILMS; ELECTROLYTES; GLYCOL; WATER;

D O I：

10.1063/1.4894525

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision. (C) 2014 AIP Publishing LLC.

引用

页数：5

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