A 20 GHz low noise amplifier with active balun in a 0.25 um SiGe BICMOS technology

被引：1

作者：

Welch, B ^{[1
]}

Kornegay, K ^{[1
]}

Park, HM ^{[1
]}

Laskar, J ^{[1
]}

机构：

[1] Cornell Univ, Ithaca, NY 14853 USA

来源：

2004 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2004: 26TH ANNIVERSARY: COMPOUNDING YOUR CHIPS IN MONTEREY | 2004年

关键词：

D O I：

10.1109/CSICS.2004.1392515

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 20 GHz low noise amplifier (LNA) with an active balun fabricated in a 0.25um SiGe BICMOS (f(i), = 47 GHz) technology is presented The LNA achieves 7 dB of gain and a noise figure of 4.9 dB with all ports simultaneously matched with better than -16 dB of return loss. The amplifier is highly linear with an IP1]dB of 0 dBm and IIP3 of 9 dBm, while consuming 14 mA of DC current from a 3.3v rail. To the authors knowledge the LNA delivers the lowest reported noise figure and highest linearity for a silicon implementation of an (active balun / LNA) at 20 GHz.

引用

页码：141 / 144

页数：4

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