Long-range ordered self-assembled InAs quantum dots epitaxially grown on (110) GaAs

被引：33

作者：

Bauer, J ^{[1
]}

Schuh, D ^{[1
]}

Uccelli, E ^{[1
]}

Schulz, R ^{[1
]}

Kress, A ^{[1
]}

Hofbauer, F ^{[1
]}

Finley, JJ ^{[1
]}

Abstreiter, G ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 20期

关键词：

D O I：

10.1063/1.1819987

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a promising approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on previously grown and in situ cleaved substrates (cleaved-edge overgrowth), arrays of long-range ordered InAs quantum dots have been fabricated. Both atomic force microscopy and micro-photoluminescence measurements demonstrate the ability to control size, position, and ordering of the quantum dots. Furthermore, single dot photoluminescence investigations confirm the high optical quality of the quantum dots fabricated. (C) 2004 American Institute of Physics.

引用

页码：4750 / 4752

页数：3

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