Thermal stability in vacuum and in air of Al/Ni/W based ohmic contacts to p-type SiC

被引:16
|
作者
Liu, S
Potts, G
Scofield, J
机构
[1] Univ Dayton, Dayton, OH 45469 USA
[2] USAF, Res Lab, AFRL, Wright Patterson AFB, OH 45433 USA
来源
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷
关键词
ohmic contacts; silicon carbide; thermal stability;
D O I
10.4028/www.scientific.net/MSF.338-342.1021
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Al/Ni/W contact demonstrated excellent thermal stability after being aged at 600 degreesC in a high vacuum of 1x10(-6) mmHg for 1022 hours. No degradation in contact resistivity was found after the aging. However, 1 hour aging in air severely degraded the ohmic characteristics of the Al/Ni/W contact. An Al/Ni/W/Mo contact showed ohmic behavior at 300 degreesC in air for 186 hours, while an Al/Ni/W/Au contact displayed good thermal stability at 600 degreesC in air for over 100 hours. In order to avoid the problem of metal oxidation in air and at elevated temperatures, we have proposed and tested a new approach to improving the in-air thermal stability of the Al/Ni/W ohmic contact by adding a top conductive oxide layer to the contact.
引用
收藏
页码:1021 / 1024
页数:4
相关论文
共 50 条
  • [31] Al/Si ohmic contacts to p-type 4H-SiC for power devices
    Kassamakova, L
    Kakanakov, R
    Kassamakov, I
    Nordell, N
    Savage, S
    Svedberg, EB
    Madsen, LD
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1009 - 1012
  • [32] Thermal stability of Ru, Pd and Al Schottky contacts to p-type 6H-SiC
    Venter, A
    Samji, ME
    Leitch, AWR
    CONFERENCE ON PHOTO-RESPONSIVE MATERIALS, PROCEEDINGS, 2004, : 2264 - 2268
  • [33] Ni-Al ohmic contact to p-type 4H-SiC
    Vang, H.
    Lazar, M.
    Brosselard, P.
    Raynaud, C.
    Cremillieu, P.
    Leclercq, J. -L.
    Bluet, J. -M.
    Scharnholz, S.
    Planson, D.
    SUPERLATTICES AND MICROSTRUCTURES, 2006, 40 (4-6) : 626 - 631
  • [34] TiAl-based Ohmic Contacts to p-type 4H-SiC
    Martychowiec, Agnieszka
    Kwietniewski, Norbert
    Kondracka, Kinga
    Werbowy, Aleksander
    Sochacki, Mariusz
    INTERNATIONAL JOURNAL OF ELECTRONICS AND TELECOMMUNICATIONS, 2021, 67 (03) : 459 - 464
  • [35] Study of Ni/Al/Au ohmic contacts to p-Type 4H-SiC applied in 600 °C environment
    Lei, Cheng
    Li, Qiang
    Liang, Ting
    Liu, RuiFang
    Li, YongWei
    Zhou, XingJian
    Jia, Pinggang
    Ghaffar, Abdul
    Xiong, JiJun
    JOURNAL OF CRYSTAL GROWTH, 2022, 592
  • [36] Titanium and aluminum-titanium ohmic contacts to p-type SiC
    Crofton, J
    Beyer, L
    Williams, JR
    Luckowski, ED
    Mohney, SE
    Delucca, JM
    SOLID-STATE ELECTRONICS, 1997, 41 (11) : 1725 - 1729
  • [37] OHMIC CONTACTS TO P-TYPE AND N-TYPE GAAS MADE WITH AL-SN-NI
    ROEDEL, RJ
    DAVITO, D
    WEST, W
    ADAMS, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (05) : 1450 - 1453
  • [38] A critical review of theory and progress in Ohmic contacts to p-type SiC
    Huang, Lingqin
    Xia, Mali
    Gu, Xiaogang
    JOURNAL OF CRYSTAL GROWTH, 2020, 531
  • [39] Improved ohmic contacts to p-type 6H-SiC
    Spiess, L
    Nennewitz, O
    Pezoldt, J
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 585 - 588
  • [40] Mechanism investigation of NiOx in Au/Ni/p-type GaN ohmic contacts annealed in air
    Lee, CT
    Lin, YJ
    Lee, TH
    JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (05) : 341 - 345