Effect of spray coated SiO2 layers on the low temperature oxidation of Si3N4

被引:6
|
作者
Lee, SH
Rixecker, G
Aldinger, F
Choi, SC
Auh, KH
机构
[1] Max Planck Inst Met Res, D-70569 Stuttgart, Germany
[2] Univ Stuttgart, Inst Nichtmet Anorgan Mat, Pulvermet Lab, D-70569 Stuttgart, Germany
[3] Hanyang Univ, Dept Ceram Engn, Sungdong Gu, Seoul 133791, South Korea
关键词
coatings; oxidation; Si3N4; SiO2; spray coating;
D O I
10.1016/S0955-2219(02)00295-9
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Si3N4 using Y2O3 as a sintering additive provides good mechanical properties and high temperature oxidation resistance, but can suffer from crack formation when oxidized at 1000 degreesC. In order to minimize this problem, a SiO2 layer was deposited onto Si3N4 by the spray coating method. The dispersion of the SiO2 slurry for the spray coating process was optimized, and dense silicate layers were formed by the spray coating and heat treatment in nitrogen atmosphere. Penetration of the coating layer into the sample was observed when the heat treatment temperature was higher than 1400 degreesC. The crystallization behavior of silicate coatings is similar to that of native oxide layers, but the formation of cristobalite is suppressed. The SiO2 coating inhibits the rapid oxidation Of Si3N4 at 1000 degreesC effectively. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1199 / 1206
页数:8
相关论文
共 50 条
  • [1] EMISSION COEFFICIENT OF SILICON COATED WITH SI3N4 OR SIO2 LAYERS
    VANDERMEER, PLAC
    GILING, LJ
    JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 652 - 655
  • [2] LOW-TEMPERATURE DEPOSITION OF SiO2, Si3N4 OR SiO2-Si3N4.
    Anon
    IBM technical disclosure bulletin, 1986, 28 (09):
  • [3] Nucleation of silicon on Si3N4 coated SiO2
    Brynjulfsen, I.
    Arnberg, L.
    JOURNAL OF CRYSTAL GROWTH, 2011, 331 (01) : 64 - 67
  • [4] The protective effect of the SiO2 coating layer on the oxidation of Si3N4
    Lee, SH
    Auh, KH
    Choi, SC
    JOURNAL OF CERAMIC PROCESSING RESEARCH, 2001, 2 (02): : 54 - 60
  • [5] Study of Si3N4/SiO2/Si and SiO2/Si3N4/Si Multi layers by O and N K-Edge X-ray Absorption Spectroscopy
    Lee, Youn-Seoung
    Lee, Won-Jun
    Kang, Sung-Kyu
    Rha, Sa-Kyun
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (08)
  • [6] Effects of Different Si3N4 Thicknesses on the Performance of PECVD SiO2/Si3N4 Double Layers Electrets
    Chen, Zhiyu
    Zou, Xudong
    Zhang, Jinwen
    2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 2008, : 2404 - 2407
  • [7] LVV SPECTRA OF SI,SIO2 AND SI3N4
    JOHANNESSEN, JS
    SPICER, WE
    STRAUSSER, YE
    PHYSICA SCRIPTA, 1979, 19 (04): : 355 - 359
  • [8] Vicinage effect for hydrogen clusters in Si3N4 and SiO2
    L'Hoir, A.
    Cohen, C.
    Ganem, J. J.
    Trimaille, I.
    Vickridge, I. C.
    Shubeita, S. M.
    PHYSICAL REVIEW A, 2012, 85 (04)
  • [10] Effect of temperature on dielectric properties of Si3N4/SiO2 composite and silica ceramic
    Du, Hongli
    Li, Yan
    Cao, Chuanbao
    JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 503 (01) : L9 - L13