Atmospheric pressure chemical vapor deposition of tin nitride thin films using a halide source

Preparation of SnNx films has been studied by atmospheric pressure chemical vapor deposition using SnCl2 and NH3 as starting materials. The films were deposited onto a quartz substrate at 550-675 degreesC with growth rates of 0.1-2.5 mum h(-1). They showed a typical X-ray diffraction pattern for SnNx with a hxagonal structure. The band-gap was estimated to be 2.05 eV from the transmission spectra. The electron probe X-ray microanalysis showed that the N/Sn ratio of the as-deposited films was 0.73-1.10, which was dependent upon the growth temperature. They were conductive with resistivities of 0.3-10 Omega cm. The electrochromism was observed when +/-1.0 V (SCE) potentials were applied to the SnNx films in a 1.0 M Na2SO4 electrolyte solution.