High thermoelectric performance of fullerene doped Bi0.5Sb1.5Te3 alloys

被引：12

作者：

Wang, Zhou ^{[1
,2
]}

Vemishetti, Aravindkumar ^{[1
,2
]}

Ejembi, John Idoko ^{[1
,2
]}

Wei, Guodong ^{[1
,2
]}

Zhang, Boliang ^{[3
]}

Wang, Li ^{[3
]}

Zhang, Yi ^{[3
]}

Guo, Shengmin ^{[3
]}

Luo, Jia ^{[4
]}

Chepko, Corin ^{[5
]}

Dai, Qilin ^{[5
]}

Tang, JinKe ^{[5
]}

Zhao, Guang-Lin ^{[1
,2
]}

机构：

[1] Southern Univ, Dept Phys, Baton Rouge, LA 70813 USA

[2] A&M Coll, Baton Rouge, LA 70813 USA

[3] Louisiana State Univ, Mech & Ind Engn Dept, Baton Rouge, LA 70803 USA

[4] Louisiana State Univ, Cain Dept Chem Engn, Baton Rouge, LA 70803 USA

[5] Univ Wyoming, Dept Phys & Astron, Laramie, WY 82071 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2016年 / 205卷

基金：

美国国家科学基金会;

关键词：

Thermoelectrics; Bi0.5Sb1.5Te3; alloy; Fullerene; SILICON-GERMANIUM ALLOYS; THERMAL-CONDUCTIVITY; TRANSPORT-PROPERTIES; PHONON-SCATTERING; HIGH-TEMPERATURE; (BI; SB)(2)TE-3; FIGURE; MERIT;

D O I：

10.1016/j.mseb.2015.12.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we report our recent experimental findings on the enhancement of thermoelectric performance of C-60 doped Bi0.5Sb1.5Te3 bulk alloys. Incorporation of a small amount of C-60 significantly reduces the crystalline particle size and leads to closely packed nanostructure, whilst slightly improve the electric conductivity in the measured temperature range. In addition, a minimum thermal conductivity of 0.4 W/(mK) at 358 K was observed, which is identified to be caused by the strong lattice phonon scattering at grain boundaries, yielding a high figure-of-merit ZT= 1.47 +/- 0.07 at 358 K. Our results demonstrate that the materials can be used for the development of advanced thermoelectrics. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：36 / 39

页数：4

共 50 条

[31] Thermoelectric properties of Bi0.5Sb1.5Te3/C60 nanocomposites
Blank, V. D.
Buga, S. G.
Kulbachinskii, V. A.
Kytin, V. G.
Medvedev, V. V.
Popov, M. Yu.
Stepanov, P. B.
Skok, V. F.
PHYSICAL REVIEW B, 2012, 86 (07):
[32] Effects of thickness on thermoelectric properties of Bi0.5Sb1.5Te3 thin films
Han, Xiaobin
Zhang, Zhenyu
Liu, Zhengmao
Xu, Chao
Lu, Xiaowei
Sun, Lin
Jiang, Peng
APPLIED NANOSCIENCE, 2020, 10 (07) : 2375 - 2381
[33] Response of thermoelectric parameters of Bi0.5Sb1.5Te3 films to secondary recrystallization
Yu. A. Boykov
V. A. Danilov
Semiconductors, 2017, 51 : 976 - 978
[34] High-Performance Ag-Modified Bi0.5Sb1.5Te3 Films for the Flexible Thermoelectric Generator
Shang, Hongjing
Li, Taiguang
Luo, Dan
Yu, Luo
Zou, Qi
Huang, Daxing
Xiao, Liye
Gu, Hongwei
Ren, Zhifeng
Ding, Fazhu
ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (06) : 7358 - 7365
[35] Diffusion Soldering of Bi0.5Sb1.5Te3 Thermoelectric Material with Cu Electrode
C. L. Yang
H. J. Lai
J. D. Hwang
T. H. Chuang
Journal of Materials Engineering and Performance, 2013, 22 : 2029 - 2037
[36] Effects of thickness on thermoelectric properties of Bi0.5Sb1.5Te3 thin films
Xiaobin Han
Zhenyu Zhang
Zhengmao Liu
Chao Xu
Xiaowei Lu
Lin Sun
Peng Jiang
Applied Nanoscience, 2020, 10 : 2375 - 2381
[37] Response of thermoelectric parameters of Bi0.5Sb1.5Te3 films to secondary recrystallization
Boykov, Yu. A.
Danilov, V. A.
SEMICONDUCTORS, 2017, 51 (08) : 976 - 978
[38] Effects of crystal-alignment and grain shape on the thermoelectric properties of Bi0.5Sb1.5Te3 alloys
Je, Koo-Chul
Ko, Beyungduk
Kim, Cham
Kim, Hoyoung
Kim, Dong-Hwan
JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 517 : 75 - 79
[39] Thermoelectric Properties of Bi0.5Sb1.5Te3 Prepared by the Ultrarapid Quenching Process
Wei, Shaohong
Chen, Hui
Wang, Zhong
Chu, Ying
Zhu, Lei
Jian, Xuyu
Yu, Haijun
MATERIALS RESEARCH, PTS 1 AND 2, 2009, 610-613 : 394 - 398
[40] Thermoelectric properties of Bi0.5Sb1.5Te3 ribbons prepared by melt spinning
Burkov, A. T.
Novikov, S. V.
Tang, X.
Yan, Y.
SEMICONDUCTORS, 2017, 51 (08) : 1024 - 1026

← 1 2 3 4 5 →