'Wrong bonds' in sputtered amorphous Ge2Sb2Te5

被引:73
|
作者
Jovari, P.
Kaban, I.
Steiner, J.
Beuneu, B.
Schops, A.
Webb, A.
机构
[1] Hungarian Acad Sci, Res Inst Solid State Phys & Opt, H-1525 Budapest, Hungary
[2] Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany
[3] Rhein Westfal TH Aachen, Inst Phys, D-52056 Aachen, Germany
[4] CEA Saclay, Lab Leon Brillouin, F-91191 Gif Sur Yvette, France
[5] HASYLAB Deutschen Elekt Synchroton, DESY, D-22603 Hamburg, Germany
关键词
D O I
10.1088/0953-8984/19/33/335212
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The structure of sputtered amorphous Ge2Sb2Te5 was investigated by high energy x-ray diffraction, neutron diffraction and Ge-, Sb- and Te K-edge EXAFS measurements. The five datasets were modelled simultaneously in the framework of the reverse Monte Carlo simulation technique. It was found that apart from Te-Sb and Te-Ge bonds existing in the crystalline phases, Ge Ge and Sb- Ge bonding is also significant in sputtered amorphous Ge2Sb2Te5. According to our results, all components obey the '8-N' rule.
引用
收藏
页数:9
相关论文
共 50 条
  • [31] Resistance modulation in Ge2Sb2Te5
    Behera, Jitendra K.
    Wang, WeiJie
    Zhou, Xilin
    Guan, Shan
    Weikang, Wu
    Shengyuan, Yang A.
    Simpson, Robert E.
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2020, 50 (50): : 171 - 177
  • [32] Study of crystallization in Ge2Sb2Te5
    Hu, D. Z.
    Xue, R. S.
    Zhu, J. S.
    INTEGRATED FERROELECTRICS, 2008, 96 : 153 - 159
  • [33] Resistance modulation in Ge2Sb2Te5
    Jitendra K.Behera
    Wei Jie Wang
    Xilin Zhou
    Shan Guan
    Wu Weikang
    Yang A.Shengyuan
    Robert E.Simpson
    JournalofMaterialsScience&Technology, 2020, 50 (15) : 171 - 177
  • [34] Structure and the mechanism of rapid phase change in amorphous Ge2Sb2Te5
    Takata, M.
    Tanaka, Y.
    Kato, K.
    Yoshida, F.
    Fukuyama, Y.
    Yasuda, N.
    Kohara, S.
    Osawa, H.
    Nakagawa, T.
    Kim, J.
    Murayama, H.
    Kimura, S.
    Kamioka, H.
    Moritomo, Y.
    Matsunaga, T.
    Kojima, R.
    Yamada, N.
    Toriumi, K.
    Ohshima, T.
    Tanaka, H.
    PHYSICS AND CHEMISTRY OF GLASSES-EUROPEAN JOURNAL OF GLASS SCIENCE AND TECHNOLOGY PART B, 2009, 50 (03): : 205 - 211
  • [35] Influence of the exchange and correlation functional on the structure of amorphous Ge2Sb2Te5
    Caravati, Sebastiano
    Bernasconi, Marco
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (02): : 260 - 266
  • [36] Steady-state photoconductivity in amorphous Ge2Sb2Te5 films
    Qamhieh, N.
    Mahmoud, S. T.
    Ghamlouche, H.
    Benkhedir, M. L.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2008, 10 (06): : 1448 - 1451
  • [37] Chemical mechanical planarization of amorphous Ge2Sb2Te5 with a soft pad
    He Aodong
    Liu Bo
    Song Zhitang
    Lu Yegang
    Li Juntao
    Liu Weili
    Feng Songlin
    Wu Guanping
    JOURNAL OF SEMICONDUCTORS, 2013, 34 (07)
  • [38] Disorder enhancement due to structural relaxation in amorphous Ge2Sb2Te5
    Fantini, P.
    Ferro, M.
    Calderoni, A.
    Brazzelli, S.
    APPLIED PHYSICS LETTERS, 2012, 100 (21)
  • [39] Optical properties of amorphous GeTe, Sb2Te3, and Ge2Sb2Te5:: The role of oxygen
    Olson, J. K.
    Li, Heng
    Ju, T.
    Viner, J. M.
    Taylor, P. C.
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (10)
  • [40] Characteristics at high electric fields in amorphous Ge2Sb2Te5 films
    Gotoh, Tamihiro
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) : 2728 - 2731