The structural and electrical characterization of Al/GO-SiO2/p-Si photodiode

GO-SiO2 composite structures were synthesized chemically and characterized by FTIR, XRD, TGA and SEM. The characterization results highlighted that the composite of the GO-SiO2 was obtained successfully and can be thought as interfacial layer between the metal and semiconductor. For that reason, the GO-SiO2 composites were inserted between Al metal and p-type Si semiconductor by spin coating technique, and Al/GO-SiO2/p-type Si device was obtained by aid of thermal evaporation. The obtained device was tested with I-V measurements for various illumination conditions. Ideality factor, barrier height and series resistance values were determined according to thermionic emission theory, Cheung and Norde functions. In addition, we studied transient photocurrent properties of the device. The results confirm that the device can be used as photodiode in the industrial applications as having good photostability and photoresponsivity.