Novel Capacitive Pressure Sensor

被引：25

作者：

Bakhoum, Ezzat G. ^{[1
]}

Cheng, Marvin H. M. ^{[2
]}

机构：

[1] Univ W Florida, Dept Elect & Comp Engn, Pensacola, FL 32514 USA

[2] Georgia So Univ, Coll Sci & Technol, Statesboro, GA 30460 USA

来源：

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 2010年 / 19卷 / 03期

关键词：

Capacitive pressure sensors; sensors; DEPOSITION;

D O I：

10.1109/JMEMS.2010.2047632

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new microelectromechanical-systems capacitive pressure sensor with extremely high sensitivity (2.24 mu F/kPa) is introduced. The sensor essentially consists of a small drop of mercury and a flat aluminum electrode that are separated by a 1 mu m-thick layer of Barium Strontium Titanate (a high dielectric-constant ceramic). The assembly constitutes a parallel-plate capacitor where the surface area of the electrodes is variable to a high degree. The mercury drop is pressured by a small corrugated metal diaphragm. As the electrode area of the parallel-plate capacitor varies, a total change in capacitance of more than 6 mu F is obtained.

引用

页码：443 / 450

页数：8

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