New design of RF rectifier for passive UHF RFID transponders

被引：13

作者：

Liu Dong-Sheng ^{[1
]}

Zou Xue-Cheng ^{[1
]}

Dai Kui ^{[1
]}

Li Si-Zheng ^{[1
]}

Hui Xue-Mei ^{[1
]}

Liu Yao ^{[1
]}

Tong Qiao-Ling ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China

来源：

MICROELECTRONICS JOURNAL | 2010年 / 41卷 / 01期

基金：

中国博士后科学基金;

关键词：

Radio frequency identification; Passive transponders; Diode-connected MOS transistor; Rectifier; Power conversion efficiency; POWER; SECTION; SENSOR; TAGS;

D O I：

10.1016/j.mejo.2009.12.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel diode-connected MOS transistor for ultra-high-frequency (UHF) micro-power rectifiers was presented, and a high efficiency N-stage charge pump voltage rectifier based on this new diode-connected MOS transistor was designed and implemented. The new diode-connected MOS transistor and the rectifier are designed and fabricated in SMIC 0.18-mu m 2P3M CMOS embedded EEPROM process. The structure design of the new diode achieved 315 mV turn-on voltage, and 415 nA reverse saturation leakage current. Compared with traditional rectifier, the rectifier using the presented diode-connected MOS has higher power conversion efficiency (PCE), higher Output voltage and smaller ripple coefficient. When the RF input is a 900-MHz sinusoid signal with the amplitude ranging from 0.8 to 1.8 V, PCEs of the charge pump rectifier with only 3-stage are more than 30%, and the maximum output voltage is 5.02 V, and its ripple coefficients are less than 1%. (c) 2009 Elsevier Ltd. All rights reserved.

引用

页码：51 / 55

页数：5

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