Overview of Resistive Switching Memory (RRAM) Switching Mechanism and Device Modeling

被引：0
|
作者：
Yu, Shimeng [1 ]
机构：
[1] Arizona State Univ, Sch Comp Informat & Decis Syst Engn, Tempe, AZ 85281 USA
来源：
2014 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2014年
关键词：
resistive switching; RRAM; mechanism; modeling;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the recent progress on the understandings of the switching mechanisms in oxide resistive switching memory (RRAM) is reviewed. Several representative device modeling approaches including numerical discretized models, numerical continuous models and analytical compact models are discussed using HfOx bipolar RRAM as a model system. The future challenges of RRAM modeling are finally discussed.
引用
收藏
页码：2017 / 2020
页数：4
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