Dispersive processes of light-induced defect creation in hydrogenated amorphous silicon

被引：6

作者：

Morigaki, K.

Takeda, K.

Hikita, H.

Cabarrocas, P. Roca i

机构：

[1] Hiroshima Univ, Dept Elect & Digital Syst Engn, Saeki Ku, Hiroshima 7315193, Japan

[2] Electrochem & Canc Inst, Chofu Ku, Tokyo 1820022, Japan

[3] Meikai Univ, Phys Lab, Chiba 2798550, Japan

[4] Ecole Polytech, CNRS, UMR 7647, Lab Phys Interfaces & Couches Minces, F-91128 Palaiseau, France

来源：

SOLID STATE COMMUNICATIONS | 2007年 / 142卷 / 04期

关键词：

disordered system; amorphous semiconductors; recombination and trapping; light-induced phenomena;

D O I：

10.1016/j.ssc.2007.01.049

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in a-Si:H. It is fitted to a stretched exponential function and then two parameters beta and tau involved in the function are estimated as a function of saturated dangling bond density N(SS). The experimental values of beta, tau, and N(SS) are compared with those calculated based on our model of light-induced defect creation in a-Si:H. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：232 / 236

页数：5

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