Simple MOSFET based high-voltage nanosecond pulse circuit

被引:26
|
作者
Chaney, A [1 ]
Sundararajan, R [1 ]
机构
[1] Arizona State Univ E, Dept Elect & Comp Engn Technol, Mesa, AZ 85212 USA
关键词
high voltage; nanosecond pulse; power MOSFET; pulse generator; pulsed-power technology; rise time; transmission line;
D O I
10.1109/TPS.2004.835966
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
Using simple but powerful electronics concepts, such as a mass produced Schmitt trigger and integrated MOSFET driver in novel circuit applications, a simple 400-V 75-ns pulse generator (pulser) has been designed, developed, and tested. For a 50-Omega matched load, the pulser produces extremely well-defined, repetitive high-voltage pulses that are free from overshoot and ringing. The width of the pulses is adjustable from 75 ns to 10 ms with the fall times of a few tens of nanoseconds-for a negative wave and a repetition period of 1.5 mus with the existing setup. By upgrading to a more complex driver circuit, much lower pulsewidths are possible. Using a 1-4 mm standard commercial cuvette, it is possible to generate electric fields of 4-1 kV/cm with this pulser. The purpose is to try to do electroporation mediated gene therapy on mammalian cells at higher electrical field strengths and submicrosecond or microsecond pulsewidths compared to conventional 200 V/cm and tens of millisecond-duration pulsewidths.
引用
收藏
页码:1919 / 1924
页数:6
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