Digital magnetoresistance characteristics of NiFeCo/Cu/Co spin-valve trilayers

被引:2
|
作者
Kim, HJ [1 ]
Lee, BI [1 ]
Joo, SK [1 ]
机构
[1] Seoul Natl Univ, Coll Engn, Div Mat Sci & Engn, Kwanak Ku, Seoul 151742, South Korea
关键词
digital magnetoresistance; 4 degrees tilt-cut Si (111) wafer; NiFeCo/Cu/Co spin-valve trilayers; uniaxial magnetic anisotropy;
D O I
10.1109/20.661491
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Digital magnetoresistance (MR) properties of the sheet and patterned NiFeCo/Cu/Co spin-valve trilayer films were characterized, As reported in our previous publication, NiFeCo/Cu/Co films showed strong in-plane uniaxial magnetic anisotropy on a special template, 4 degrees tilt-cut Si(111) wafer with a 50 a of Cu underlayer, without any externally applied magnetic field during the deposition, In order to demonstrate the industrial applicability of NiFeCo/Cu/Co films on the specific templates for digital MR devices, dynamic and static MR measurements were performed along the easy axis of the films, For dynamic MR measurement, NiFeCo/Cu/Co films were optimized with respect to Cu spacer thickness and patterned into a stripe of high aspect ratio of 1: 200 (height: width) where the easy axis of the film was aligned along the height direction, After patterning, uniaxial magnetic anisotropy was maintained, and MR properties showed no appreciable degradation, Therefore, it was belie,ed that the special template is effective for the uniaxial magnetic anisotropy of NiFeCo/Cu/Co films and useful in the industrial applications, MR properties of sheet and patterned trilayer films suggest that these NiFeCo/Cu/Co spin valves on the specific templates are good candidates for digital MR devices such as magnetoresistive random access memory (MRAM).
引用
收藏
页码:558 / 561
页数:4
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